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Silicone Carbide, Synthetic Diamond, Black Silicon Carbide, Green Silicon Carbide, Carborundum, 409-21-2

Silicone Carbide, Synthetic Diamond, Black Silicon Carbide, Green Silicon Carbide, Carborundum, 409-21-2

SILICON CARBIDE – SILICON CARBIDE

1. CHEMICAL IDENTITY AND DEFINITION

Parameter Information
Chemical Name (IUPAC) Silicon Carbide
Other Names Carborundum, SiC Compound, Synthetic Diamond, Black Silicon Carbide, Green Silicon Carbide, Moissanite, Crystolon
Chemical Formula SiC
Molecular Weight 40.10 g/mol
CAS Number 409-21-2
EC Number (EINECS) 206-991-8
Appearance Black (low purity) or green (high purity) crystalline powder
Odor Odorless
Physical State (20°C) Solid (powder / granules / crystals)
Chemical Class Carbide / Semiconductor

2. WHAT IS SILICON CARBIDE (SiC)?

Silicon carbide (SiC) is an extremely hard and thermally stable compound obtained by the high-temperature synthesis of silicon (Si) and carbon (C). It is very rare in nature (as the mineral moissanite) and is produced industrially. It is widely used in industrial and engineering applications due to its near-diamond hardness, excellent thermal conductivity, chemical resistance, and semiconductor properties.

3. PHYSICAL PROPERTIES

Property Value
Appearance Black (low purity) or green (high purity) crystalline powder
Chemical Formula SiC
Molecular Weight 40.10 g/mol
Density 3.21 g/cm³
Bulk Density 1.3 – 1.5 g/cm³ (depending on particle size)
Melting Point ~2,300 – 2,700 °C (decomposes)
Hardness (Mohs) 9.0 – 9.5 (near diamond)
Hardness (Knoop) ~2,500 – 3,000 kg/mm²
Color Black or green
Odor Odorless
Crystal Structure Hexagonal (wurtzite) / Cubic
Refractive Index 2.65 – 2.69

4. CHEMICAL PROPERTIES

Property Information
Chemical Formula SiC
CAS Number 409-21-2
EC Number 206-991-8
Chemical Purity (SiC) ≥ 98.0%
Free Silica (SiO₂) None
Iron (Fe) ≤ 0.5% (black), ≤ 0.1% (green)
Reactivity Very low; chemically inert
Acid Resistance Excellent
Base Resistance Good
Oxidation Slowly oxidizes above 800°C
Stability Very stable under normal conditions

5. SiC POLYTYPE TYPES

Polytype Crystal Structure Semiconductor Property Applications
3C-SiC Cubic Narrow bandgap Abrasives
4H-SiC Hexagonal Wide bandgap Power electronics
6H-SiC Hexagonal Wide bandgap LEDs, semiconductors
15R-SiC Rhombohedral Medium bandgap Specialty applications

6. ELECTRICAL AND THERMAL PROPERTIES

Property Value
Bandgap 2.2 – 3.3 eV (depending on polytype)
Electrical Conductivity Semiconductor
Electrical Resistivity 10¹⁰ – 10⁵ Ω·cm (depends on doping)
Thermal Conductivity 50 – 100 W/m·K (temperature dependent)
Coefficient of Thermal Expansion 4.0 × 10⁻⁶ /K
Specific Heat ~750 J/kg·K
Dielectric Constant ~9.7
Electron Mobility ~1,000 cm²/V·s

7. SiC TYPES COMPARISON

Property Black SiC Green SiC
Color Black Green
Purity 98 – 99% > 99.5%
Hardness High Very high
Brittleness Moderate High
Abrasive Power Good Excellent
Applications General abrasives Precision grinding, electronics
Cost Low High

8. APPLICATIONS

8.1. Abrasives and Blasting

Application Description
Grinding Wheels Industrial grinding and cutting
Sandblasting Surface cleaning and roughening
Sandpaper Abrasive materials
Cutting Tools Cutting hard materials
Sharpening Stones Tool sharpening
Lapping Precision surface finishing

8.2. Electronics and Semiconductors

Application Description
High-Temperature Semiconductors Devices operating above 300°C
LED Technology Blue and UV LEDs
Power Electronics Schottky diodes, MOSFETs
RF Devices High-frequency applications
Sensors High-temperature sensors
Quantum Physics Research applications

8.3. Automotive Industry

Application Description
Brake Discs Ceramic brake discs (high performance)
Ceramic Armor Ballistic protection
Heat Shields Exhaust and engine heat protection
Bearings Wear-resistant bearings
Seals High-temperature seals

8.4. Defense and Aerospace

Application Description
Armor Coatings Ballistic armor
High-Strength Materials Structural components
Radar-Absorbing Materials Stealth technology
Space Applications High-temperature structures

8.5. Industrial Furnaces and Heat Treatment

Application Description
Furnace Linings High-temperature resistance
Heating Elements High-temperature furnaces
Crucibles Metal melting and casting
Refractory Materials High-temperature applications

8.6. Other Applications

Application Description
High-Temperature Ceramics Specialty ceramic parts
Mirrors Space telescope mirrors
Jewelry As synthetic gemstone (moissanite)
Catalyst Support Chemical reactions
Nuclear Industry Neutron shielding

9. ADVANTAGES OF SILICON CARBIDE

Advantage Description
High Hardness 9.5 Mohs, hardest material after diamond
High Heat Resistance Withstands up to 2,700°C
High Thermal Conductivity Excellent thermal management
Low Thermal Expansion High dimensional stability
Chemical Resistance Resistant to acids and bases
Semiconductor Properties Wide bandgap
Wear Resistance Excellent
No Free Silica No silicosis risk
Reusable Low cost

10. PARTICLE SIZE DISTRIBUTION (for Blasting)

Grade Particle Size Applications
Coarse 20 – 40 mesh Heavy surface cleaning
Medium 40 – 60 mesh General blasting
Fine 60 – 120 mesh Precision surface finishing
Very Fine 120 – 240 mesh Polishing and lapping
Micronized < 20 μm Precision grinding

11. RECOMMENDED USAGE RATES

Application Recommended Ratio / Parameter
Blasting Pressure 3 – 8 bar
Refractory Mixes 10 – 40%
Abrasive Discs 50 – 90%
Semiconductor Doping Depends on polytype and dopant
Composites 10 – 60%
Armor Coatings 30 – 70%

12. SAFETY AND HEALTH INFORMATION

Parameter Information
Hazard Low toxicity (inert)
Dust Inhalation may cause respiratory irritation
Free Silica None (no silicosis risk)
Skin Contact May cause mechanical irritation
Eye Contact May cause mechanical irritation
Ingestion Low toxicity
Carcinogenicity Not classified
Mutagenicity Negative
Acute Toxicity Very low

12.1. FIRST AID MEASURES

Route of Exposure Action
Inhalation Remove to fresh air. If respiratory irritation persists, seek medical attention.
Skin Contact Wash with plenty of soap and water.
Eye Contact Rinse thoroughly with water for at least 15 minutes. Seek medical attention.
Ingestion Rinse mouth. Drink plenty of water. Seek medical attention.

13. STORAGE AND HANDLING

Parameter Information
Storage Conditions Cool, dry, well-ventilated area
Container Requirements Tightly closed, original packaging
Protect From Excessive moisture, strong alkalis, hydrofluoric acid
Shelf Life Unlimited (with proper storage)
Dust Precautions Prevent dust formation; use respiratory protection

14. TRANSPORT INFORMATION

Parameter Information
UN Number Not regulated (not a hazardous material)
Hazard Class Not applicable
Packing Group Not applicable
ADR/RID Not regulated
IMDG Code Not regulated
IATA (Air) Not regulated
Marine Pollutant No

15. PACKAGING OPTIONS

Packaging Type Quantity Material
Kraft Bag 25 kg Kraft + PE liner
Plastic Bucket 5-25 kg HDPE
Big Bag 500-1000 kg Polypropylene
Plastic Bag 5-25 kg HDPE/LDPE
Aluminum Foil Bag 1-5 kg Laminated aluminum
Steel Drum 50-100 kg Steel

16. REGULATORY STATUS

Region / Authority Status
European Union (REACH) Registered substance
USA (EPA TSCA) Listed on TSCA inventory
Turkey Registered substance
China Listed on inventory
Japan (CSCL) Listed on CSCL inventory

17. OTHER NAMES AND SYNONYMS

Type Name
Turkish Names Silisyum Karbür, Karborundum, SiC, Yapay Elmas
English Names Silicon Carbide, Carborundum, SiC Compound, Synthetic Diamond, Moissanite, Crystolon
Trade Names Black Silicon Carbide, Green Silicon Carbide
CAS Number 409-21-2

18. SUMMARY AND CRITICAL WARNINGS

Product Summary

Parameter Value
Product Silicon Carbide (SiC)
CAS Number 409-21-2
Purity ≥ 98.0%
Appearance Black or green crystalline powder
Hardness (Mohs) 9.0 – 9.5
Density 3.21 g/cm³
Melting Point ~2,300 – 2,700 °C
Primary Applications Abrasives, electronics, automotive, defense

CRITICAL WARNINGS

1. High Hardness: 9.5 Mohs hardness makes it the second hardest known material after diamond. Ideal for abrasive applications.

2. Thermal Resistance: Withstands up to 2,700°C. Suitable for high-temperature furnaces and refractory applications.

3. No Silicosis Risk: Contains no free silica (SiO₂). No risk of silicosis disease.

4. Semiconductor Properties: Wide bandgap (2.2-3.3 eV) suitable for high-temperature electronics and power semiconductors.

5. Reusability: Can be reused multiple times in blasting and abrasive applications. Reduces costs.

6. Chemical Resistance: Excellent resistance to acids and bases. Can be used in corrosive environments.

7. Black vs Green: Black SiC (lower purity) for general abrasives; Green SiC (high purity) for precision grinding and electronics.

8. Low Dust Generation: Advantageous for occupational health. Easier dust control.

9. Semiconductor Applications: 4H-SiC and 6H-SiC polytypes used in LEDs, MOSFETs, and Schottky diodes.

10. Automotive Applications: Ceramic brake discs provide wear resistance and heat resistance in high-performance vehicles.

11. Defense Applications: High strength in ballistic armor coatings.

12. Moissanite: Natural SiC mineral (moissanite) used as a synthetic diamond alternative in jewelry.

IMPORTANT DISCLAIMER: This Technical Data Sheet (TDS) is for informational purposes only and is prepared based on available technical data. The user is responsible for determining the suitability of the product for their specific application and for complying with all local, national, and international regulations. For complete safety, storage, use, handling, disposal, and regulatory compliance information, refer to the official Safety Data Sheet (SDS/MSDS) provided by the manufacturer/supplier. This document is not a substitute for professional or medical advice.

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